AOD242

AOD242 40V N-Channel MOSFET General Description The AOD242 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 54A < 5.8mΩ < 8.2mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D D Bottom View D G S G S G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A C TC=100° TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Maximum 40 ±20 54 42 165 14.5 11.5 40 80 53.5 26.5 2.5 1.6 -55 to 175 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 15 41 2.2 Max 20 50 2.8 Units ° C/W ° C/W ° C/W Rev 0: Mar. 2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOD242 E...