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AOD2908 Dataheets PDF



Part Number AOD2908
Manufacturers Freescale
Logo Freescale
Description N-Channel MOSFET
Datasheet AOD2908 DatasheetAOD2908 Datasheet (PDF)

AOD2908 100V N-Channel MOSFET General Description The AOD2908 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 1.

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AOD2908 100V N-Channel MOSFET General Description The AOD2908 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100V 52A < 13.5mΩ D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C C TA=25° TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case I J Maximum 100 ±20 52 36 120 150 9 7 20 20 75 37 2.5 1.6 -55 to 175 Units V V VGS TC=25° C TC=100° C ID IDM IDM TA=25° C TA=70° C IDSM IAS EAS PD PDSM TJ, TSTG A A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 15 41 1.5 Max 20 50 2 Units ° C/W ° C/W ° C/W 1/6 www.freescale.net.cn Free Datasheet http://www.datasheet4u.com/ AOD2908 100V N-Channel MOSFET Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=100V, VGS=0V TJ=55° C VDS=0V, VGS=±20V VDS=VGS,ID=250µA VGS=10V, VDS=5V,PW=260µs VGS=10V, VDS=5V,PW=1µs VGS=10V, ID=20A TJ=125° C VDS=5V, ID=20A IS=1A,VGS=0V G Min 100 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current On state drain current Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage 1 5 ±100 2.7 120 150 11 18 30 0.7 1 70 1250 1670 970 43 3 27 13.5 23 3.3 4.1 µA nA V A A mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=0V, VDS=50V, f=1MHz 727 25 2 19 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs VGS=10V, VDS=50V, RL=2.5Ω , RGEN=3Ω VGS=10V, VDS=50V, ID=20A 5.5 6 7.5 14 15 14 39 140 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction tempera.


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