N-Channel MOSFET
AOD3N60/AOU3N60
600V,2.5A N-Channel MOSFET
General Description
The AOD3N60 & AOU3N60 have been fabricated using an adva...
Description
AOD3N60/AOU3N60
600V,2.5A N-Channel MOSFET
General Description
The AOD3N60 & AOU3N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 700V@150℃ 2.5A < 3.5Ω
100% UIS Tested! 100% Rg Tested!
TO252 DPAK Top View Bottom View D D Top View
TO251 D Bottom View
S S G AOD3N60
G G D AOU3N60 S S D G
G S
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentB Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F
C
Maximum 600 ±30 2.5 1.6 8 2 60 120 5 56.8 0.45 -50 to 150 300
Units V V A A mJ mJ V/ns W W/ oC ° C ° C
VGS TC=25° C TC=100° C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL
Symbol RθJA RθCS RθJC
Typical 45 1.8
Maximum 55 0.5 2.2
Units ° C/W ° C/W ° C/W
Rev 6: Jul 2011
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