N-Channel MOSFET
AOD3N50/AOU3N50
500V, 3A N-Channel MOSFET
General Description
Product Summary
The AOD3N50 & AOU3N50 have been fabrica...
Description
AOD3N50/AOU3N50
500V, 3A N-Channel MOSFET
General Description
Product Summary
The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested! 100% Rg Tested!
600V@150℃ 2.8A < 3Ω
Top View
TO252 DPAK
Bottom View
TO251
Top View
Bottom View
D
D D
S G
G S
S
D G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain CurrentB
TC=25°C TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy H
MOSFET dv/dt ruggedness Peak diode recovery dv/dt
VGS
ID
IDM IAR EAR EAS dv/dt
TC=25°C Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
TJ, TSTG TL
S DG
G
Maximum 500 ±30 2.8 1.8 9 2 60 120 50 5 57 0.45
-50 to 150
300
S
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F
Symbol RθJA RθCS RθJC
Typical 45 1.8
Maximum 55 0.5 2.2
Units V V
A
A mJ mJ V/ns W W/ oC °C
°C
Units °C/W °C/W °C/W
Rev.8.0: March 201...
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