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N-Channel MOSFET. IRFW644B Datasheet

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N-Channel MOSFET. IRFW644B Datasheet






IRFW644B MOSFET. Datasheet pdf. Equivalent




IRFW644B MOSFET. Datasheet pdf. Equivalent





Part

IRFW644B

Description

N-Channel MOSFET



Feature


IRFW644B / IRFI644B November 2001 IRFW 644B / IRFI644B 250V N-Channel MOSFET G eneral Description These N-Channel enha ncement mode power field effect transis tors are produced using Fairchild’s p roprietary, planar, DMOS technology. Th is advanced technology has been especia lly tailored to minimize on-state resis tance, provide superior switching perfo rmance, and withstan.
Manufacture

Fairchild Semiconductor

Datasheet
Download IRFW644B Datasheet


Fairchild Semiconductor IRFW644B

IRFW644B; d high energy pulse in the avalanche and commutation mode. These devices are we ll suited for high efficiency switching DC/DC converter and switch mode power supplies. Features • • • • • • 14A, 250V, RDS(on) = 0.28Ω @VGS = 10 V Low gate charge ( typical 47 nC) Low Crss ( typical 30 pF) Fast switchi ng 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● .


Fairchild Semiconductor IRFW644B

G! G S D2-PAK IRFW Series G D S I2-PA K IRFI Series ! S Absolute Maximum Ra tings Symbol VDSS ID IDM VGSS EAS IAR E AR dv/dt PD TC = 25°C unless otherwis e noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Curren t - Continuous (TC = 100°C) Drain Curr ent - Pulsed (Note 1) IRFW644B / IRFI6 44B 250 14 8.9 56 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) .


Fairchild Semiconductor IRFW644B

Units V A A A V mJ A mJ V/ns W W W/°C C °C Gate-Source Voltage Single Puls ed Avalanche Energy Avalanche Current R epetitive Avalanche Energy Peak Diode R ecovery dv/dt Power Dissipation (TA = 2 5°C) * 480 14 13.9 5.5 3.13 139 1.11 -55 to +150 300 TJ, Tstg TL Power Dis sipation (TC = 25°C) - Derate above 25 °C Operating and Storage Temperature R ange Maximum lead temper.

Part

IRFW644B

Description

N-Channel MOSFET



Feature


IRFW644B / IRFI644B November 2001 IRFW 644B / IRFI644B 250V N-Channel MOSFET G eneral Description These N-Channel enha ncement mode power field effect transis tors are produced using Fairchild’s p roprietary, planar, DMOS technology. Th is advanced technology has been especia lly tailored to minimize on-state resis tance, provide superior switching perfo rmance, and withstan.
Manufacture

Fairchild Semiconductor

Datasheet
Download IRFW644B Datasheet




 IRFW644B
November 2001
IRFW644B / IRFI644B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converter and
switch mode power supplies.
Features
• 14A, 250V, RDS(on) = 0.28@VGS = 10 V
• Low gate charge ( typical 47 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D!
GS
D2-PAK
IRFW Series
GDS
I2-PAK
IRFI Series
G!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, Tstg
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
IRFW644B / IRFI644B
250
14
8.9
56
± 30
480
14
13.9
5.5
3.13
139
1.11
-55 to +150
300
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient *
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ Max
-- 0.9
-- 40
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
Free Datasheet http://www.datasheet4u.com/




 IRFW644B
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
250 --
ID = 250 µA, Referenced to 25°C -- 0.24
IDSS
Zero Gate Voltage Drain Current
VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
-- --
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
4.0
VGS = 10 V, ID = 7.0 A
-- 0.22 0.28
VDS = 40 V, ID = 7.0 A (Note 4) -- 11.7
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1250 1600
-- 150 195
-- 30
40
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 125 V, ID = 14 A,
RG = 25
-- 20
50
-- 115 240
-- 150 310
(Note 4, 5)
--
95
200
VDS = 200 V, ID = 14 A,
VGS = 10 V
(Note 4, 5)
--
--
--
47
6.2
23
60
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 14
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 56
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 14 A
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 14 A,
dIF / dt = 100 A/µs
-- 240
(Note 4) -- 1.96
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3.9mH, IAS = 14A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 14A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
Free Datasheet http://www.datasheet4u.com/




 IRFW644B
Typical Characteristics
Top : 15V.0GSV
10.0 V
8.0 V
7.0 V
6.5 V
101 6.0 V
5.5 V
Bottom: 5.0 V
100
10-1
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
1.5
V = 10V
1.2 GS
V = 20V
GS
0.9
0.6
0.3
Note : TJ = 25
0.0
0 10 20 30 40 50
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3500
3000
2500
2000
1500
1000
500
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C
iss
C
oss
C
rss
Notes :
1. VGS = 0 V
2. f = 1 MHz
100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
101
150oC
100 25oC
10-1
2
-55oC
Notes :
1. V = 40V
2. 25DS0μ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
15025
Notes :
1.
2.
V25G0Sμ=
0V
s Pulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 50V
10 DS
VDS = 125V
8 VDS = 200V
6
4
2
Note : ID = 14 A
0
0 5 10 15 20 25 30 35 40 45 50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, November 2001
Free Datasheet http://www.datasheet4u.com/



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