KPA1790

SMD Type MOS Field Effect Transistor KPA1790 Features Dual chip type Low on-state resistance N-channel RDS(on)1 = 0.12 RDS(on)2 = 1.19 P-channel RDS(on)1 = 0.45 RDS(on)2 = 0.74 Low input capacitance N-channel Ciss = 180 pF TYP. P-channel Ciss = 230 pF TYP. Built-in G-S protection diode Small and surface mount package TYP. (VGS = 10 V, ID = 0.5 A) TYP. (VGS = 4 V, ID = 0.5 A) TYP. (VGS = -10 V, ID = -0.35 A) TYP. (VGS = -4 V, ID = -0.35 A) IC IC Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) *1 Total Power Dissipation (1 unit) *2 Total Power Dissipation (2 units) *2 Channel Temperature Storage Temperature Single Avalanche Current *3 Single Avalanche Energy *3 *1. PW 10 s, Duty Cycle 1% Symbol VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg IAS EAS 0.5 0.02 N-Channel 60 20 1.0 4.0 1.7 2 150 -55 to +150 -0.35 0.01 A mJ P- Channel -60 20 0.7 2.8 Unit V V A A W W *2. Mounted on ceramic substrate of 2000 mm2 X 2.25 mm *3. Starting Tch = 25 , VDD = 30 V, RG = 25 , VGS = 20 0V www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.co SMD Type KPA1790 Electrical Characteristics Ta = 25 Parameter Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Symbol IDSS IGSS VGS(off) | yfs | RDS(on)1 Drain to Source On-state Resistance RDS(on)2 RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Del...