A2790GR

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2790GR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION The µ PA2790GR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. 8 PACKAGE DRAWING (Unit: mm) 5 N-channel 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 P-channel 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 6.0 ±0.3 FEATURES Low on-state resistance N-channel RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 3 A) 1.8 Max. RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 3 A) P-channel RDS(on)1 = 60 mΩ MAX. (VGS = −10 V, ID = −3 A) RDS(on)2 = 80 mΩ MAX. (VGS = −4.5 V, ID = −3 A) Low input capacitance N-channel Ciss = 500 pF TYP. P-channel Ciss = 460 pF TYP. 1 4 +0.05 –0.10 5.37 Max. 4.0 1.0 0.20 0.10 Min. 0.6 1.27 0.12 M 0.40 +0.11 –0.05 0.5 ±0.2 0.10 Built-in gate protection diode Small and surface mount package (Power SOP8) EQUIVALENT CIRCUITS N-channel Drain P-channel Drain ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 Gate Protection Diode Source Gate Body Diode Gate Body Diode µ PA2790GR Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. ...