IXA45IF1200HB

IXA45IF1200HB XPT IGBT Copack C (2) I C25 = = VCES VCE(sat)typ = 78 A 1200 V 1.8 V Part number IXA45IF1200HB (G) 1 E (3) Features / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage Applications: ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers Package: ● Housing: TO-247 ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant IGBT Ratings Symbol VCES VGES IC25 I C100 Ptot I CES I GES VCE(sat) VGE(th) Q Gon t d(on) tr t d(off) tf Eon Eoff RBSOA SCSOA t SC I SC RthJC Total power dissipation Collector emitter leakage current Definition Collector emitter voltage Maximum DC gate voltage Collector current Conditions VGE = 0 V TVJ = 25°C TVJ = 25°C TC = 25°C TC = 100 °C TVJ = 25°C VCE = VCES ; VGE = 0 V VCE = 0 V; VGE = ±20 V I C = 35 A; VGE = 15 V I C = 1.5 mA; VGE = VCE VCE = 600 V; VGE = 15 V; IC = 35 A TVJ = 25°C TVJ = 125 °C TVJ = 25°C TVJ = 125 °C min. typ. max. 1200 ±20 78 45 325 0.1 Unit V V A A W mA mA nA V V V nC ns ns n...