AOD2816

AOD2816 80V N-Channel MOSFET General Description Product Summary The AOD2816 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100% UIS Tested 100% Rg Tested 80V 35A < 15mΩ < 29mΩ Top View TO252 DPAK Bottom View D D D SG GS Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC G S Maximum 80 ±20 35 27 100 8.5 7 25 31 53.5 26.5 2.5 1.6 -55 to 175 Typ Max 16 20 41 50 2.2 2.8 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.1.0: November 2012 www.aosmd.com Page 1 of 6 AOD2816 Electrical Characteristics (TJ=2...