CYStech Electronics Corp.
Low VCE(sat) NPN Planar Transistor
Spec. No. : C852B3 Issued Date : 2004.05.28 Revised Date :...
CYStech Electronics Corp.
Low VCE(sat)
NPN Planar
Transistor
Spec. No. : C852B3 Issued Date : 2004.05.28 Revised Date : Page No. : 1/5
BTD5765B3
Features
High current capability Low collector-to-emitter saturation voltage High allowable power dissipation
Applications
Relay drivers, lamp drivers, motor drivers, strobes
Symbol
BTD5765B3
B : Base C : Collector E : Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Power Dissipation (Note) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 15 10 7 5 9 550 150 -55~+150 Unit V V V A A mW °C °C
Note : when a device is mounted on a glass epoxy board, measuring 35mm×30mm×1mm.
BTD5765B3
CYStek Product Specification
Free Datasheet http://www.datasheet4u.com/
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 15 10 7 450 400 200 Typ. 230 170 25 Max. 100 100 180 350 0.95 800 Unit V V V nA nA mV mV 1.2V MHz pF
Spec. No. : C852B3 Issued Date : 2004.05.28 Revised Date : Page No. : 2/5
Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=15V, IE=0 VEB=5V, IC=0 IC=1.5A, IB=30mA IC=3A, IB=60mA IC=1.5A, IB=30mA VCE=2V, IC=500mA VCE=2V, IC=2A VCE=2V, IC=5A VCE=6V, IC=50mA, f=100MHz VCB=10V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
BTD5765B3
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