SPB21N50C3 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Peri...
SPB21N50C3 Cool MOS™ Power
Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance
VDS @ Tjmax RDS(on) ID
560 0.19 21
PG-TO263
V Ω A
Type SPB21N50C3
Package PG-TO263
Ordering Code Q67040-S4566
Marking 21N50C3
Maximum Ratings Parameter Continuous drain current
TC = 25 °C TC = 100 °C
Symbol SPB ID 21 13.1 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt 63 690 1 21 ±20 ±30 208
Value
Unit A
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=10A, VDD=50V
A mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=21A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt
7)
A V W °C V/ns
2005-11-07
Free Datasheet http://www.datasheet4u.com/
-55...+150 15
Rev. 2.3
Page 1
SPB21N50C3
Maximum Ratings Parameter Drain Source voltage slope
VDS = 400 V, ID = 21 A, Tj = 125 °C
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 3) Soldering temperature, reflow soldering, MSL1 1.6 mm (0.063 in.) from case for 10...