IPI50N10S3L-16

IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 100 15.4 50 PG-TO262-3-1 V mΩ A Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested PG-TO263-3-2 PG-TO220-3-1 Type IPB50N10S3L-16 IPI50N10S3L-16 IPP50N10S3L-16 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N10L16 3N10L16 3N10L16 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V1) Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Gate source voltage2) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=25A Value 50 37 200 330 50 ±20 100 -55 ... +175 55/175/56 mJ A V W °C Unit A Rev. 1.1 page 1 2008-04-09 Free Datasheet http://www.datasheet4u.com/ IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 Parameter Symbol Conditions min. Thermal characteristics1) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold volt...