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UNISONIC TECHNOLOGIES CO., LTD 2N70
2 Amps, 700 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 6.3Ω@VGS = 10V * Ultra Low gate charge (typical 8.1nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel
Ordering Number Package Lead Free Halogen Free 2N70L-TA3-T 2N70G-TA3-T TO-220 2N70L-TF1-T 2N70G-TF1-T TO-220F1 2N70L-TF3-T 2N70G-TF3-T TO-220F 2N70L-TM3-T 2N70G-TM3-T TO-251 2N70L-TN3-R 2N70G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source 2N70L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating
(1) R: Tape Reel, T: Tube (2) TA3: TO-220, TF1: TO-220F1, TF3: TO-220F, (2) TM3: TO-251, TN3:TO-252 (3) G: Halogen Free, L: Lead Free
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QW-R502-334.C
Free Datasheet http://www.datasheet4u.com/
2N70
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
Power MOSFET
PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 2.0 A Continuous ID 2.0 A Drain Current 8.0 A Pulsed (Note 2) IDM Single Pulsed (Note 3) EAS 140 mJ Avalanche Energy 2.8 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 45 W Power Dissipation PD TO-220F/TO-220F1 28 W TO-251/TO-252 30 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=45mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
SYMBOL θJA θJc RATINGS 62.5 110 2.76 4.46 4.24 UNIT °С/W °С/W °С/W °С/W °С/W
PARAMETER TO-220/TO-220F/TO-220F1 Junction to Ambient TO-251/TO-252 TO-220 Junction to Case TO-220F/TO-220F1 TO-251/TO-252
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS = 0V, ID = 250μA VDS = 700V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V MIN TYP MAX UNIT 700 10 100 -100 0.4 2.0 5.0 270 38 5 4.0 6.3 350 50 7 V μA nA nA V/°С V Ω pF pF pF
PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain.
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