BSB019N03LXG

BSB019N03LX G OptiMOSTM2 Power-MOSFET Features Pb-free plating; RoHS compliant Dual sided cooling Low profile (<0.7 mm) Avalanche rated Qualified for consumer level application Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Optimized for high switching frequency DC/DC converter Low parasitic inductance Product Summary V DS R DS(on),max ID 30 1.9 174 V mΩ A MG-WDSON-2 Compatible with DirectFET® package MX footprint and outline 1) Type BSB019N03LX G 2) Package MG-WDSON-2 Outline MX Marking 1003 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=45 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Gate source voltage 1) TM Value 174 110 31 400 50 290 ±20 Unit A I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=50 A, R GS=25 Ω mJ V CanPAK uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered trademark of International Rectifier Corporation. Rev. 2.0 page 1 2009-05-11 Free Datasheet http://www.datasheet4u.com/ BSB019N03LX G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R thJA=45 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 89 2.8 -40 ... 150 55/150/56 ...