Power MOSFET
BSB044N08NN3 G
OptiMOS™3 Power-MOSFET
Features • Optimized technology for DC/DC converters • Excellent gate charge x R ...
Description
BSB044N08NN3 G
OptiMOS™3 Power-MOSFET
Features Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance Dual sided cooling low parasitic inductance
Product Summary VDS RDS(on),max ID
80 4.4 90
CanPAKTM M MG-WDSON-2
Low profile (<0.7mm)
N-channel, normal level
100% avalanche tested
Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Compatible with DirectFET® package MN footprint and outline2)
V mW A
Type BSB044N08NN3 G
Package MG-WDSON-2
Outline MN
Marking 0208
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
I D V GS=10 V, T C=25 °C
90
V GS=10 V, T C=100 °C
68
V GS=10 V, T A=25 °C, R thJA=58 K/W2)
18
Pulsed drain current3)
I D,pulse T C=25 °C
360
Avalanche energy, single pulse
E AS I D=30 A, R GS=25 W
660
Gate source voltage
V GS
±20
1) J-...
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