HJ127

HI-SINCERITY MICROELECTRONICS CORP. HJ127 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6017 Issued Date : 1996.04.12 Revised Date : 2008.04.09 Page No. : 1/4 Description TO-252 High DC current gain Built-in a damper diode at E-C Darlington Schematic C Absolute Maximum Ratings (TA=25°C) Maximum Temperatures Storage Temperature .................................................................. -55 ~ +150 °C Junction Temperature .......................................................................... +150 °C B R1 R2 E Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 20 W Maximum Voltages and Currents BVCBO Collector to Base Voltage .................................................................................................................... -100 V BVCEO Collector to Emitter Voltage ...........................................