Document
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6018-B Issued Date : 1996.04.15 Revised Date : 2000.11.01 Page No. : 1/3
HJ1609
NPN EPITAXIAL PLANAR TRANSISTOR
Description
• Low frequency high voltage amplifier. • Complementary pair with HJ1109.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ................................................................................. 1.25 W
• Maximum Voltages and Currents BVCBO Collector to Base Voltage .................................................................................... 160 V BVCEO Collector to Emitter Voltage................................................................................