HJ210

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6011-B Issued Date : 1996.03.12 Revised Date : 2000.11.01 Page No. : 1/2 HJ210 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ210 is designed for low voltage, low-power, high-gain audio amplifier applications. Absolute Maximum Ratings (Ta=25°C) Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ................................................................................. 12.5 W Maximum Voltages and Currents BVCBO Collector to Base Voltage ..................................................................................... -40 V BVCEO Collector to Emitter Voltage......................................................................