HJ2955

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6003 Issued Date : 1994.10.04 Revised Date : 2002.04.03 Page No. : 1/4 HJ2955 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ2955 is designed for general purpose of amplifier and switching applications. Absolute Maximum Ratings (Ta=25°C) TO-252 Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ...................................................................................... 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C)..................................................................................... 20 W Maximum Voltages and Currents BVCBO Collector to Base Voltage...................................................................................... -70 V BVCEO Collector to Emitter Voltage..........................................................................