HJ47

HI-SINCERITY MICROELECTRONICS CORP. HJ47 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ47 is designed for high voltage switch switching applications. Spec. No. : HE6032-A Issued Date : 1998.02.01 Revised Date : 2000.11.01 Page No. : 1/3 Absolute Maximum Ratings (Ta=25°C) Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C) .................................................................................... 20 W Maximum Voltages and Currents BVCBO Collector to Base Voltage .................................................................................... 350 V BVCEO Collector to Emitter Voltage................................................................................. 250 V BVEBO Emitte...