Automotive P-Channel MOSFET
SQJ403EEP
www.vishay.com
Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on...
Description
SQJ403EEP
www.vishay.com
Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration
PowerPAK® SO-8L Single
FEATURES
- 30 0.0085 0.0200 - 30a Single
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET ESD Protection: 3000 V AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC
S
m 5m 6.1
5.1 3m m
D 4 G S
G
3 S 2 S 1
5400 Ω
P-Channel D
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free PowerPAK SO-8L SQJ403EEP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb L = 0.1 mH TC = 25 °C TC = 125 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f TC = 25 °C TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT - 30 ± 20 - 30 - 30 - 30 - 84 - 50 125 68 22 - 55 to + 175 260 mJ W °C A UNIT V
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc SYMBOL RthJA RthJC LIMIT 68 2.2 UNIT °C/W
Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. e. ...
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