Automotive N-Channel MOSFET
SQJ412EP
www.vishay.com
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on)...
Description
SQJ412EP
www.vishay.com
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
PowerPAK® SO-8L Single
FEATURES
40 0.0041 0.0052 32 Single
D
TrenchFET® Power MOSFET AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
m 5m 6.1
5.1 3m m
G
D 4 G S
3 S 2 S 1
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free PowerPAK SO-8L SQJ412EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb L = 0.1 mH TC = 25 °C TC = 125 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f TC = 25 °C TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 40 ± 20 32 32 32 128 53 140 83 27 - 55 to + 175 260 mJ W °C A UNIT V
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc SYMBOL RthJA RthJC LIMIT 65 1.8 UNIT °C/W
Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. e. See Solder Profile (www.vishay.com/doc?73257). The...
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