Automotive P-Channel MOSFET
SQJ469EP
www.vishay.com
Vishay Siliconix
Automotive P-Channel 80 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on)...
Description
SQJ469EP
www.vishay.com
Vishay Siliconix
Automotive P-Channel 80 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = - 10 V RDS(on) (Ω) at VGS = - 6 V ID (A) Configuration
PowerPAK® SO-8L Single
S
FEATURES
- 80 0.025 0.029 - 32 Single
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC
m 5m 6.1
5.1 3m m
G
D
4 G S
3 S 2 S 1
D
P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free PowerPAK SO-8L SQJ469EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb L = 0.1 mH TC = 25 °C TC = 125 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f TC = 25 °C TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT - 80 ± 20 - 32 - 24 - 32 - 128 - 45 101 100 33 - 55 to + 175 260 mJ W °C A UNIT V
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc SYMBOL RthJA RthJC LIMIT 65 1.5 UNIT °C/W
Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay....
Similar Datasheet