Automotive Dual P-Channel MOSFET
SQJ963EP
www.vishay.com
Vishay Siliconix
Automotive Dual P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RD...
Description
SQJ963EP
www.vishay.com
Vishay Siliconix
Automotive Dual P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) per leg Configuration
PowerPAK® SO-8L Dual
m 5m 6.1
D
2
FEATURES
- 60 0.085 0.115 -8 Dual
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC
5.1 3m m
S1
S2
D
1
G1
G2
4 G2 S2
3 2 G1
1 S1
Bottom View
D1 P-Channel MOSFET
D2 P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free PowerPAK SO-8L SQJ963EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f L = 0.1 mH TC = 25 °C TC = 125 °C Conduction)a TC = 25 °Ca TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT - 60 ± 20 -8 -7 -8 - 25 - 20 20 27 9 - 55 to + 175 260 mJ W °C A UNIT V
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc SYMBOL RthJA RthJC LIMIT 85 5.5 UNIT °C/W
Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric...
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