SQJ951EP

SQJ951EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = - 10 V RDS(on) (Ω) at VGS = - 4.5 V ID (A) Configuration - 30 0.017 0.036 - 30 Dual FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC S1 5.1 3m m PowerPAK® SO-8L Dual m 5m 6.1 D 2 S2 G1 G2 D 1 G2 4 S2 3 2 G1 D1 1 S1 D2 P-Channel MOSFET P-Channel MOSFET Bottom View ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free PowerPAK SO-8L SQJ951EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f L = 0.1 mH TC = 25 °C TC = 125 °C TC = 25 °Ca TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT - 30 ± 20 - 30 - 28 - 30 - 120 - 27 36.5 56 18.5 - 55 to + 175 260 mJ W °C A UNIT V THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc SYMBOL RthJA RthJC LIMIT 85 2.7 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parame...