SIA419DJ

SiA419DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = - 4.5 V 0.039 at VGS = - 2.5 V - 20 0.051 at VGS = - 1.8 V 0.066 at VGS = - 1.5 V 0.113 at VGS = - 1.2 V ID (A) - 12a - 12a - 12a - 12 a FEATURES Qg (Typ.) 17.5 nC - 10.6 Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance Compliant to RoHS Directive 2002/95/EC PowerPAK SC-70-6L-Single APPLICATIONS Load Switch, PA Switch and Battery Switch for Portable Devices S 1 D 2 D 3 6 D 5 D S 4 Ordering Information: SiA419DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) S 2.05 mm G Part # code BIX XXX Lot Traceability and Date code D P-Channel MOSFET Marking Code G 2.05 mm ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 20 ±5 - 12a - 12a - 8.8b, c - 7b, c - 30 - 12a - 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 Unit V A Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit RthJA t≤5s 28 36 Maximum Junction-t...