P-Channel MOSFET
Si2301ADS
New Product
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–20
rDS(on) (W)
0.130 @ V...
Description
Si2301ADS
New Product
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–20
rDS(on) (W)
0.130 @ VGS = –4.5 V 0.190 @ VGS = –2.5 V
ID (A)b
–2.0 –1.6
TO-236 (SOT-23)
G
1 3 D
S
2
Top View Si2301DS (1A)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C PD TJ, Tstg TA= 25_C TA= 70_C ID IDM IS –0.75 0.9 0.57 –55 to 150
Symbol
VDS VGS
5 sec
–20 "8 –2.0 –1.6 –10
Steady State
Unit
V
–1.75 –1.4 A –0.6 0.7 0.45 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 71835 S-20617—Rev. B, 29-Apr-02 www.vishay.com RthJA
Symbol
Typical
115 140
Maximum
140 175
Unit
_C/W
1
Free Datasheet http://www.datasheet4u.com/
Si2301ADS
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Limits Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = –250 mA VDS = VGS, ID = –...
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