SI2301CDS

Si2301CDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.112 at VGS = - 4.5 V 0.142 at VGS = - 2.5 V ID (A)a - 3.1 3.3 nC - 2.7 Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2301CDS (N1)* * Marking Code Ordering Information: Si2301CDS-T1-E3 (Lead (Pb)-free) Si2301CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit - 20 ±8 - 3.1 - 2.5 - 2.3b, c - 1.8b, c - 10 - 1.3 - 0.72b, c 1.6 1.0 0.86b, c 0.55b, c - 55 to 150 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient b, d 5 s Steady State Symbol RthJA RthJF Typical 120 62 Maximum 145 78 Unit °C/W Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 175 °C/W. Document Number: 68741 S10-2430-Rev. C, 25-Oct-10 www.vishay.com 1 Free Datasheet http://www....