Automotive Dual N-Channel MOSFET
SQJ942EP
www.vishay.com
Vishay Siliconix
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs
PRODUCT SUMMARY
N-CHANNEL...
Description
SQJ942EP
www.vishay.com
Vishay Siliconix
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs
PRODUCT SUMMARY
N-CHANNEL 1 N-CHANNEL 2 VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 40 0.022 0.026 15 Dual N 40 0.011 0.013 45
FEATURES
TrenchFET® Power MOSFET AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
PowerPAK® SO-8L Asymmetric
5.1 3m
D1
D2
6
m .15
m
D2 D1
m
G1
G2
4 G2
3 S2
2 G1
S1
1 S1
S2 N-Channel 2 MOSFET
Bottom View
N-Channel 1 MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free PowerPAK SO-8L Dual Asymmetric SQJ942EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f L = 0.1 mH TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg 15 15 15 60 19 18.5 17 6 - 55 to + 175 260 N-CHANNEL 1 40 ± 20 45 32 44 180 27 36.5 48 16 mJ W °C A N-CHANNEL 2 40 UNIT V
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc SYMBOL RthJA RthJC N-CHANNEL 1 75 9 N-CHANNEL 2 70 3.1 UNIT °C/W
Notes a. Package lim...
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