LT1H40A

Leadless Chip LED Device LT1t40A series LT1t40A series s Outline Dimensions (Unit : mm) 2125 Size, 0.8mm Thickness, Leadless Chip LED Devices s Radiation Diagram (Ta=25˚C) -20˚ Relative luminous intensity(%) 2.0 0.8 0˚ 100 80 60 40 20 0 X +20˚ +40˚ -40˚ 1.25 1 2 Cathode mark Recommended PWB pattern for soldering Device center 1.2 1.1 -60˚ +60˚ -80˚ +80˚ 0.5 0.3 1.25 1.1 1.25 -20˚ -40˚ Relative luminous intensity(%) 1.Plating area Resist 2.Pin connections 1 Cathode 2 Anode 1 3.Unspecified tolerance:±0.1 0˚ 100 80 60 40 20 0 Y +20˚ +40˚ 0.4 0.4 2 -60˚ +60˚ -80˚ +80˚ U type: There is Anode mark on the device because polarity faces in the opposite direction. s Absolute Maximum Ratings Model No. Radiation color Radiation material Power dissipation Forward current Peak forward current P IF IFM*1 (mW) (mA) (mA) (Ta=25˚C) Derating factor Reverse voltage Operating temperature Storage temperature Soldering temperature (mA/˚C) VR Topr Tstg Tsol*2 (V) (˚C) (˚C) (˚C) DC Pulse -30 to +85 -30 to +85 -30 to +85 -30 to +85 -30 to +85 -30 to +85 -30 to +85 -40 to +100 -40 to +100 -40 to +100 -40 to +100 -40 to +100 -40 to +100 -40 to +100 350 350 350 350 350 350 350 4 0.40 0.67 50 30 75 LT1U40A Red(Super-luminosity) GaAlAs on GaAlAs 5 0.13 0.67 50 10 23 LT1P40A Red GaP 5 0.40 0.67 50 30 84 LT1D40A Red GaAsP on GaP 5 0.40 0.67 50 30 84 LT1S40A Sunset orange GaAsP on GaP 5 0.40 0.67 50 30 84 LT1H40A Yellow GaAsP on GaP 5 0.40 0.67 50 30 84 LT1E40A Yellow-green G...