LT1H51A

Chip LED Device LT1t51A series LT1t51A series s Outline Dimensions (Unit : mm) 3.3!2.9mm, 1.1mm Thickness, Colored Diffusion Chip LED Devices s Radiation Diagram (Ta=25˚C) 3.3 Colored diffusion -30˚ -40˚ -20˚ -10˚ 0˚ 100 +10˚ +20˚ +30˚ +40˚ 2.9 1.9 0.4 0.4 0.4 0.85 0.95 80 -50˚ Relative luminous intensity(%) 2.9 1 2 0.6 +50˚ 60 -60˚ +60˚ 40 +70˚ 20 +80˚ (4-R0.2) 0.9 +0.1 0.16-0.06 -70˚ 1.5 0.9 (R0.2) -80˚ +0.2 1.1-0.1 0.8 -90˚ 0 +90˚ (0.3) (0.3) (0.3) (0.3) Pin connections 1 Anode 2 Cathode Unspecified tolerance:±0.2 T type: Polarity faces in the opposite direction. s Absolute Maximum Ratings Model No. Radiation color Radiation material LT1T51A LT1P51A LT1D51A LT1S51A LT1H51A LT1E51A LT1K51A Red(High-luminosity) Red Red Sunset orange Yellow Yellow-green Green GaAlAs on GaAs GaP GaAsP on GaP GaAsP on GaP GaAsP on GaP GaP GaP Power dissipation Forward current Peak forward current P IF IFM (mW) (mA) (mA) 66 23 85 85 50 50 50 30 10 30 30 20 20 20 50 50 50 50 50 50 50 0to0.15 0.3 (Ta=25˚C) Derating factor Reverse voltage Operating temperature Storage temperature Soldering temperature (mA/˚C) VR Topr Tstg Tsol*3 (V) (˚C) (˚C) (˚C) DC Pulse 0.40 0.13 0.40 0.40 0.27 0.27 0.27 0.67 0.67 0.67 0.67 0.67 0.67 0.67 5 5 5 5 5 5 5 -25 to +85 -25 to +85 -25 to +85 -25 to +85 -25 to +85 -25 to +85 -25 to +85 -25 to +100 -25 to +100 -25 to +100 -25 to +100 -25 to +100 -25 to +100 -25 to +100 350 350 350 350 350 350 350 *1 Duty ratio=1/10, Pulse width=0.1ms *...