LT1K82A

Chip LED Device LT1t82A series LT1t82A series s Outline Dimensions (Unit : mm) 3.3!2.9mm, 1.1mm Thickness, High-luminosity Chip LED Devices with Lens s Radiation Diagram (Ta=25˚C) 3.3 Colorless transparency -40˚ -30˚ -20˚ -10˚ 0˚ 100 +10˚ +20˚ +30˚ +40˚ 80 -50˚ Relative luminous intensity(%) 0.85 0.95 2.9 1.9 0.4 0.4 0.4 +50˚ 60 1 2 0.6 2.9 -60˚ +60˚ 40 +70˚ 20 +80˚ -70˚ (4-R0.2) 0.9 +0.1 0.16-0.06 (R0.55) 1.5 0.9 -80˚ (R0.2) -90˚ 0 +0.2 1.1-0.1 +90˚ (0.3) (0.3) (0.3) (0.3) 0to0.15 0.3 0.8 Pin connections 1 Anode 2 Cathode Unspecified tolerance:±0.2 U,T type:Polarity faces in the opposite direction. s Absolute Maximum Ratings Model No. Radiation color Radiation material Power dissipation Forward current Peak forward current P IF IFM*1 (mW) (mA) (mA) (Ta=25˚C) Derating factor Reverse voltage Operating temperature Storage temperature Soldering temperature (mA/˚C) VR Topr Tstg Tsol*2 (V) (˚C) (˚C) (˚C) DC Pulse -25 to +85 -25 to +85 -25 to +85 -25 to +85 -25 to +85 -25 to +85 -25 to +85 -25 to +85 -25 to +100 -25 to +100 -25 to +100 -25 to +100 -25 to +100 -25 to +100 -25 to +100 -25 to +100 350 350 350 350 350 350 350 350 4 0.40 0.67 50 30 75 LT1U82A Red(Super-luminosity) GaAlAs on GaAIAs 5 0.40 0.67 50 30 66 LT1T82A Red(High-luminosity) GaAlAs on GaAs 5 0.13 0.67 50 10 23 GaP LT1P82A Red 5 0.40 0.67 50 30 85 GaAsP on GaP LT1D82A Red 5 0.40 0.67 50 30 85 LT1S82A Sunset orange GaAsP on GaP 5 0.27 0.67 50 20 50 GaAsP on GaP LT1H82A Yellow 5...