Voltage Transistors. HLB120A Datasheet

HLB120A Transistors. Datasheet pdf. Equivalent

HLB120A Datasheet
Recommendation HLB120A Datasheet
Part HLB120A
Description NPN Triple Diffused Planar Type High Voltage Transistors
Feature HLB120A; HI-SINCERITY MICROELECTRONICS CORP. HLB120A NPN Triple Diffused Planar Type High Voltage Transistors.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HLB120A Datasheet





Hi-Sincerity Mocroelectronics HLB120A
HI-SINCERITY
MICROELECTRONICS CORP.
HLB120A
NPN Triple Diffused Planar Type High Voltage Transistors
Spec. No. : HE6412
Issued Date : 1998.12.01
Revised Date : 2005.02.05
Page No. : 1/4
Description
The HLB120A is a medium power transistor designed for use in switching
applications.
Features
High Breakdown Voltage
Low Collector Saturation Voltage
Fast Switching Speed
TO-92
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW
Total Power Dissipation (TC=25°C) ...................................................................................................................... 7 W
Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage ......................................................................................................................... 600 V
VCEO Collector to Emitter Voltage ...................................................................................................................... 400 V
VEBO Emitter to Base Voltage ................................................................................................................................ 6 V
IC Collector Current (DC) ............................................................................................................................... 100 mA
IC Collector Current (Pulse)............................................................................................................................ 200 mA
IB Base Current (DC)........................................................................................................................................ 20 mA
IB Base Current (Pulse).................................................................................................................................... 40 mA
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
Min. Typ. Max
600 -
-
400 -
-
6- -
- - 10
- - 10
- - 10
- - 400
- - 750
- -1
8- -
10 - 36
Unit Test Conditions
V IC=100uA, IE=0
V IC=10mA, IB=0
V IE=10uA, IC=0
uA VCB=550V
uA VCE=400V, IB=0
uA VEB=6V, IC=0
mV IC=50mA, IB=10mA
mV IC=100mA, IB=20mA
V IC=50mA, IB=10mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HLB120A
HSMC Product Specification



Hi-Sincerity Mocroelectronics HLB120A
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6412
Issued Date : 1998.12.01
Revised Date : 2005.02.05
Page No. : 2/4
Current Gain & Collector Current
100
10000
Saturation Voltage & Collector Current
VCE=10V
10
1
1 10 100 1000
Collector Current (mA)
10000
Saturation Voltage & Collector Current
1000
100
10
1
VCE(sat) @ IC=5IB
10 100
Collector Current (mA)
1000
Capacitance & Reverse-Biased Voltage
10
1000
VBE(sat) @ IC=5IB
100
1
10 100
Collector Current (mA)
1000
10.00
1.00
0.10
Switching time & Collector Current
Tstg
Tf
Ton
VCC=125V, IC=5IB
0.01
10
Collector Current (mA)
HLB120A
100
Cob
1
1 10 100
Reverse Biased Voltage (V)
Safe Operating Area
1
0.1
PT=1ms
PT=100ms
0.01 PT=1s
0.001
1
10 100
Forward Voltage (V)
1000
HSMC Product Specification



Hi-Sincerity Mocroelectronics HLB120A
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6412
Issued Date : 1998.12.01
Revised Date : 2005.02.05
Page No. : 3/4
TO-92 Dimension
B
C
E
F
α2
A
123
α3
D
H
I α1
G
Marking:
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
H LB
1 2 0A
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
3-Lead TO-92 Plastic Package
HSMC Package Code: A
DIM Min. Max.
A 4.33 4.83
B 4.33 4.83
C 12.70
-
D 0.36 0.56
E - *1.27
F 3.36 3.76
G 0.36 0.56
H - *2.54
I - *1.27
α1 - *5°
α2 - *2°
α3 - *2°
*: Typical, Unit: mm
TO-92 Taping Dimension
DIM Min. Max.
A 4.33 4.83
H2 H2
H2AH2A
D2
D 3.80 4.20
D1 0.36 0.53
D2 4.33 4.83
A
F1,F2 2.40 2.90
H3 H 15.50 16.50
H1 8.50 9.50
H2 -
1
H2A -
1
L
L1
F1F2
H4 H
H3 - 27
H4 - 21
L - 11
H1
W1
L1 2.50
-
W P 12.50 12.90
P1 5.95 6.75
D1 D
P2 50.30 51.30
T - 0.55
T2 P1
TP
T1
P2
T1 - 1.42
T2 0.36 0.68
W 17.50 19.00
W1 5.00 7.00
Unit: mm
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HLB120A
HSMC Product Specification





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