HLB125E

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6703 Issued Date : 1992.11.25 Revised Date : 2004.11.03 Page No. : 1/5 HLB125E NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB125E is designed for lighting applications and low switch-mode power supplies. And it is high voltage capability and high switching speeds. Features TO-220 Internal Schematic Diagram C High Speed Switching Low Saturation Voltage High Reliability Absolute Maximum Ratings B E Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature .................................................................................................................................... +150 °C Maximum Power Dissipation Total Power Dissipation (TC=25°C) .....................................................................................................................