ROITHNER LASERTECHNIK
A-1040 WIEN, FLEISCHMANNGASSE 9
TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roith...
ROITHNER LASERTECHNIK
A-1040 WIEN, FLEISCHMANNGASSE 9
TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail:
[email protected] http://www.roithner-laser.com
RLT80805MG
Infrared Laserdiode
TECHNICAL DATA
Structure: GaAlAs double heterostructure Lasing wavelength: 808 nm typ. Max. optical power: 5 mW Package: 5.6 mm PIN CONNECTION:
1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode
LASERDIODE MUST BE COOLED!
NOTE!
Maximum Ratings (Tc=25°C) CHARACTERISTIC SYMBOL Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operating Temperature TC Storage Temperature TSTG
RATING 5 2 30 -10 .. +45 -40 .. +85
UNIT mW V V °C °C
Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX Optical Output Power Po kink free 5 Threshold Current Ith 20 25 40 Operation Current Iop Po = 5 mW 40 50 Operation Voltage Vop Po = 5 mW 2.5 Lasing Wavelength Po = 5 mW 790 808 810 λp Beam Divergence Po = 5 mW 5 8 11 θ// Beam Divergence Po = 5 mW 25 31 37 θ⊥ Astigmatism As Po = 5 mW, NA=0.4 5 Monitor Current Im Po = 5mW, V r=5V 10
UNIT mW mA mA V nm ° ° µm µA
Free Datasheet http://www.datasheet4u.com/
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