SMD Type
Transistors
PNP Silicon Power Switching Transistor FCX790A
Features
2W power dissipation. 6A peak pulse curre...
SMD Type
Transistors
PNP Silicon Power Switching
Transistor FCX790A
Features
2W power dissipation. 6A peak pulse current. Excellent HFE characteristics. Low saturation voltage.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC Ptot Tj,Tstg Rating -50 -40 -5 -6 -2 1 -55 to +150 Unit V V V A A W
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SMD Type
FCX790A
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector-base cut-off current Emitter Cut-Off Current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter ON voltage * Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO IEBO VCB=-10V VEB=-4V Testconditons
Transistors
Min -50 -40 -5
Typ
Max
Unit V V V
0.1 0.1 -250 -350 -450 -0.9 -0.8 300 250 200 150 100 225 24 35 600 800
ìA ìA mV V V
IC=-0.5A, IB=-5mA VCE(sat) IC=-1A, IB=-10mA IC=-2A, IB=-50mA VBE(sat) IC=-1A, IB=-10mA VBE(on) IC=-1A, VCE=-2V IC=-10mA,VCE=-2V IC=-500mA,VCE=-2V IC=-1A,VCE=-2V IC=-2A,VCE=-2V IC=-50mA, VCE=-5V, f=50MHz VEB=0.5V, f=1MHz VCB=-10V, f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA
Static Forward Current Transfer Ratio *
hFE
Transitional frequency Input capacitance Output capacitance Tu...