DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ603
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ603 is P-channel M...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SJ603
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ603 is P-channel MOS Field Effect
Transistor designed for solenoid, motor and lamp driver.
ORDERING INFORMATION
PART NUMBER 2SJ603 2SJ603-S 2SJ603-ZJ 2SJ603-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD
Note
FEATURES
Super low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = −10 V, ID = −13 A) RDS(on)2 = 75 mΩ MAX. (VGS = −4.0 V, ID = −13 A) Low input capacitance: Ciss = 1900 pF TYP. (VDS = −10 V, VGS = 0 V) Built-in gate protection diode
Note TO-220SMD package is produced only in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
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VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
−60
V V A A W W °C °C A mJ (TO-262)
Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
m 20 m 25 m 70
50 1.5 150 −55 to +150 −25 62.5
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V (TO-263, TO-220SMD)
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