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J603 Dataheets PDF



Part Number J603
Manufacturers NEC
Logo NEC
Description 2SJ603
Datasheet J603 DatasheetJ603 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ603 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ603 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ603 2SJ603-S 2SJ603-ZJ 2SJ603-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES • Super low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = −10 V, ID = −13 A) RDS(on)2 = 75 mΩ MAX. (VGS = −4.0 V, ID = −13 A) • Low input capacitance: Ciss = 1900 pF TYP. (VDS = .

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ603 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ603 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ603 2SJ603-S 2SJ603-ZJ 2SJ603-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES • Super low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = −10 V, ID = −13 A) RDS(on)2 = 75 mΩ MAX. (VGS = −4.0 V, ID = −13 A) • Low input capacitance: Ciss = 1900 pF TYP. (VDS = −10 V, VGS = 0 V) • Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) www.DataSheet4U.com VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg −60 V V A A W W °C °C A mJ (TO-262) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 m 20 m 25 m 70 50 1.5 150 −55 to +150 −25 62.5 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14648EJ3V0DS00 (3rd edition) Date Published July 2002 NS CP(K) Printed in Japan The mark 5 shows major revised points. © 2000, 2001 Free Datasheet http://www.datasheet4u.com/ 2SJ603 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage www.DataSheet4U.com TEST CONDITIONS VDS = −60 V, VGS = 0 V VGS = MIN. TYP. MAX. −10 UNIT µA µA V S m 20 V, VDS = 0 V −1.5 10 −2.0 21 38 53 1900 350 140 10 11 66 20 m 10 −2.5 VDS = −10 V, ID = −1 mA VDS = −10 V, ID = −13 A VGS = −10 V, ID = −13 A VGS = −4.0 V, ID = −13 A VDS = −10 V VGS = 0 V f = 1 MHz VDD = −30 V, ID = −13 A VGS = −10 V RG = 0 Ω 48 75 mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = −48 V VGS = −10 V ID = −25 A IF = 25 A, VGS = 0 V IF = 25 A, VGS = 0 V di/dt = 100 A / µs 38 7 10 1.0 49 100 Reverse Recovery Time Reverse Recovery Charge TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = −20 → 0 V − ID VDD BVDSS VDS 50 Ω L VDD TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL PG. RG VDD VDS (−) 90% 90% 10% 10% VGS (−) VGS Wave Form 0 10% VGS 90% IAS VGS (−) 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = −2 mA 50 Ω RL VDD PG. 2 Data Sheet D14648EJ3V0DS Free Datasheet http://www.datasheet4u.com/ 2SJ603 TYPICAL CHARACTERISTICS (TA = 25°C ) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 60 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 0 20 40 60 80 100 120 140 160 100 80 60 40 20 0 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 Tch - Channel Temperature - ˚C TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA –100 ID(pulse) 10 0 PW = 10 ID - Drain Current - A –10 R DS (o n) Lim it ed ID(DC) 1 P Li owe m r DC ite D d iss ip at µs µs m 10 io n s m s www.DataSheet4U.com –1 –0.1 –0.1 TC = 25˚C Single Pulse –1 –10 –100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W 100 Rth(j-A) = 83.3˚C/W 10 Rth(j-C) = 2.5˚C/W 1 0.1 Single Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D14648EJ3V0DS 3 Free Datasheet http://www.datasheet4u.com/ 2SJ603 FORWARD TRANSFER CHARACTERISTICS –100 –80 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID - Drain Current - A ID - Drain Current - A –10 –60 VGS = –10 V –1 TA = −55˚C 25˚C 75˚C 125˚C –40 –4.5 V –4.0 V –0.1 VDS = –10 V Pulsed –2 –3 –4 –5 VGS - Gate to Source Voltage - V –20 Pulsed 0 0 –1 –2 –3 –4 –5 –0.01 –1 VDS - Drain to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 Pulsed | yfs | - Forward Transfer Admittance - S 100 80 ID = –25 A –13 A –5 A 10 TA = 125˚C 75˚C 25˚C −55˚C 60 www.DataSheet4U.com 1 40 0.1 VDS = –10 V Pulsed –0.1 –10 –100 –1 ID - Drain.


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