Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ603
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ603 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.
ORDERING INFORMATION
PART NUMBER 2SJ603 2SJ603-S 2SJ603-ZJ 2SJ603-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD
Note
FEATURES
• Super low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = −10 V, ID = −13 A) RDS(on)2 = 75 mΩ MAX. (VGS = −4.0 V, ID = −13 A) • Low input capacitance: Ciss = 1900 pF TYP. (VDS = −10 V, VGS = 0 V) • Built-in gate protection diode
Note TO-220SMD package is produced only in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
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VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
−60
V V A A W W °C °C A mJ (TO-262)
Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
m 20 m 25 m 70
50 1.5 150 −55 to +150 −25 62.5
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V (TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14648EJ3V0DS00 (3rd edition) Date Published July 2002 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
©
2000, 2001
Free Datasheet http://www.datasheet4u.com/
2SJ603
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage
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TEST CONDITIONS VDS = −60 V, VGS = 0 V VGS =
MIN.
TYP.
MAX. −10
UNIT
µA µA
V S
m 20 V, VDS = 0 V
−1.5 10 −2.0 21 38 53 1900 350 140 10 11 66 20
m 10
−2.5
VDS = −10 V, ID = −1 mA VDS = −10 V, ID = −13 A VGS = −10 V, ID = −13 A VGS = −4.0 V, ID = −13 A VDS = −10 V VGS = 0 V f = 1 MHz VDD = −30 V, ID = −13 A VGS = −10 V RG = 0 Ω
48 75
mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = −48 V VGS = −10 V ID = −25 A IF = 25 A, VGS = 0 V IF = 25 A, VGS = 0 V di/dt = 100 A / µs
38 7 10 1.0 49 100
Reverse Recovery Time Reverse Recovery Charge
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 Ω PG. VGS = −20 → 0 V − ID VDD BVDSS VDS 50 Ω L VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL PG. RG VDD VDS (−)
90% 90% 10% 10%
VGS (−) VGS
Wave Form
0
10%
VGS
90%
IAS
VGS (−) 0 τ τ = 1 µs Duty Cycle ≤ 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = −2 mA 50 Ω RL VDD
PG.
2
Data Sheet D14648EJ3V0DS
Free Datasheet http://www.datasheet4u.com/
2SJ603
TYPICAL CHARACTERISTICS (TA = 25°C )
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 60
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
0 20 40 60 80 100 120 140 160
100 80 60 40 20 0
50 40 30 20 10 0 0
20
40
60
80
100
120 140
160
Tch - Channel Temperature - ˚C
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA –100
ID(pulse)
10 0
PW =
10
ID - Drain Current - A
–10
R
DS
(o
n)
Lim
it
ed
ID(DC)
1
P Li owe m r DC ite D d iss ip at
µs
µs
m
10
io n
s
m
s
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–1
–0.1 –0.1
TC = 25˚C Single Pulse –1 –10 –100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - ˚C/W
100
Rth(j-A) = 83.3˚C/W
10 Rth(j-C) = 2.5˚C/W 1
0.1 Single Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D14648EJ3V0DS
3
Free Datasheet http://www.datasheet4u.com/
2SJ603
FORWARD TRANSFER CHARACTERISTICS –100 –80
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
ID - Drain Current - A
ID - Drain Current - A
–10
–60
VGS = –10 V
–1
TA = −55˚C 25˚C 75˚C 125˚C
–40
–4.5 V –4.0 V
–0.1 VDS = –10 V Pulsed –2 –3 –4 –5 VGS - Gate to Source Voltage - V
–20 Pulsed 0 0 –1 –2 –3 –4 –5
–0.01 –1
VDS - Drain to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 Pulsed
| yfs | - Forward Transfer Admittance - S
100
80 ID = –25 A –13 A –5 A
10 TA = 125˚C 75˚C 25˚C −55˚C
60
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1
40
0.1 VDS = –10 V Pulsed –0.1 –10 –100 –1 ID - Drain.