2SJ605

SMD Type MOS Field Effect Transistors 2SJ605 TO-263 + 0 .1 1 .2 7 -0 .1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Super low on-state resistance: RDS(on)1 = 20 m RDS(on)2 = 31 m MAX. (VGS = -10 V, ID = -33 A) + 0 .2 8 .7 -0 .2 MAX. (VGS = -4.0 V, ID = -33 A) Low input capacitance Ciss = 4600 pF TYP. (VDS = -10 V, VGS = 0 A) +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 2.54 +0.2 -0.2 +0.1 5.08-0.1 + 0 .2 2 .5 4 -0 .2 Built-in gate protection diode + 0 .2 5 .2 8 -0 .2 + 0 .2 1 5 .2 5 -0 .2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(pulse) *1 Total Power Dissipation Channel Temperature Storage temperature Single Avalanche Current *2 Single Avalanche Energy *2 *1. PW 10ìs,Dduty cycle 1%. Symbol VDSS VGSS ID ID(pulse) PT Tch Tstg IAS EAS Rating -60 20 65 200 1.5 150 -55 to +150 -45 203 A mJ Unit V V A A W *2.Starting Tch=25 ,RG=25Ù,VGS=-20V-0, VDD=-30V 5 .6 0 1Gate gate 1 2Drain drain 2 3Source source 3 www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ SMD Type 2SJ605 Electrical Characteristics Ta = 25 Parameter Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Feedback Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage Reverse Recovery...