DB2S316

DB2S316 Silicon epitaxial planar type For small current rectification DB2J316 in SSMini2 type package  Features  Low forward voltage VF  Short reverse recovery time trr  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Unit: mm  Marking Symbol:C7  Packaging DB2S31600L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current *1 Junction temperature Operating ambient temperature Storage temperature Symbol VR VRRM IF(AV) IFM IFSM Tj Topr Tstg Rating 30 30 100 300 1 125 –40 to +85 –55 to +125 Unit V V mA mA A °C °C °C 1: Cathode 2: Anode Panasonic JEITA Code SSMini2-F5-B SC-79 SOD-523 Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)  Electrical Characteristics Ta = 25°C±3°C Parameter Forward voltage Reverse current Terminal capacitance Reverse recovery time *1 Symbol VF IR Ct trr IF = 100 mA VR = 30 V VR = 10 V, f = 1 MHz IF = IR = 100 mA, Irr = 0.1 × IR , RL = 100 Ω 2 0.8 Conditions Min Typ Max 0.55 15 Unit V µA pF ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequ...