Silicon epitaxial planar type
This product complies with the RoHS Directive (EU 2002/95/EC).
DZ2J068
Silicon epitaxial planar type
For constant volta...
Description
This product complies with the RoHS Directive (EU 2002/95/EC).
DZ2J068
Silicon epitaxial planar type
For constant voltage / waveform clipper and surge absorption circuit Low noise type Features Package
Code SMini2-F5-B Pin Name 1. Cathode 2. Anode
Excellent rising characteristics of zener current Iz Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter Repetitive peak forward current Total power dissipation Junction temperature Storage temperature
*
Marking Symbol: GJ, GU
Rating 200 200 150 –55 to +150 Unit mA mW °C °C
Symbol IFRM PT Tj Tstg
Note) *: PT = 200 mW achieved with a printed circuit board.
Electrical Characteristics Ta = 25°C±3°C
Parameter Forward voltage Zener voltage *1, 2, 4 Zener operating resistance Zener rise operating resistance Reverse current Temperature coefficient of zener voltage *3 Symbol VF VZ RZ RZK IR SZ IF = 10 mA IZ = 5 mA IZ = 5 mA IZ = 0.5 mA VR = 4 V IZ = 5 mA 3.2 6.46 Conditions Min Typ Max 1.0 7.14 20 60 0.1 Unit V V W W mA mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 5 MHz. 3. *1: The temperature must be controlled 25°C for VZ measurement. VZ value measured at other temperature must be adjusted to VZ (25°C) *2 : VZ guaranteed 20 ms after current flow. *3 : Tj = 25°C to 150°C *4 : Rank classificat...
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