Document
Q3-Class HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFK64N50Q3 IXFX64N50Q3
D
G S
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA
EAS
dv/dt
PD
TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
Maximum Ratings
500
V
500
V
30
V
40
V
TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C
64
A
160
A
64
A
4
J
IS IDM, VDD VDSS, TJ 150C TC = 25C
50
1000
-55 ... +150 150
-55 ... +150
V/ns
W
C C C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Torque (TO-264) Mounting Force (PLUS247)
1.13/10 20..120 /4.5..27
Nm/lb.in N/lb
TO-264 PLUS247
10
g
6
g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values Min. Typ. Max.
500
V
3.5
6.5 V
200 nA
50 A 2 mA
85 m
VDSS =
ID25 =
RDS(on)
trr
500V 64A 85m 250ns
TO-264 (IXFK)
G D S Tab
PLUS247 (IXFX)
G
D S
Tab
G = Gate D = Drain S = Source Tab = Drain
Features
Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG
Advantages
High Power Density Easy to Mount Space Savings
Applications
DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode
Power Supplies DC Choppers Temperature and Lighting Controls
© 2019 IXYS CORPORATION, All Rights Reserved
DS100346A(12/19)
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
RGi
Gate Input Resistance
td(on) tr td(off) tf
Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External)
Qg(on) Qgs Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC RthCS
Characteristic Values Min. Typ. Max.
25
42
S
6950
pF
937
pF
93
pF
0.13
36
ns
11
ns
46
ns
9
ns
145
nC
50
nC
67
nC
0.125C/W
0.15
C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr QRM IRM
IF = 32A, -di/dt = 100A/s VR = 100V, VGS = 0V
Characteristic Values Min. Typ. Max.
64 A
256 A
1.4 V
1.54 14
250 ns C A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXFK64N50Q3 IXFX64N50Q3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
ID - Amperes
ID - Amperes
Fig. 1. Output Characteristics @ TJ = 25oC
60
VGS = 10V
9V
50
40
8V
30
20 10
0 0
60 50
7V
6V
1
2
3
4
5
6
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125oC
VGS = 10V 8V
40
7V 30
20
6V 10
5V
0
0
2
4
6
8
10
12
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 32A Value vs. Drain Current
3.0
VGS = 10V
2.6
TJ = 125oC
2.2
1.8 TJ = 25oC
1.4
1.0
0.6 0
20
40
60
80
100
120
ID - Amperes
ID - Amperes
RDS(on) - Normalized
ID - Amperes
IXFK64N50Q3 IXFX64N50Q3
Fig. 2. Extended Output Characteristics @ TJ = 25oC
140
VGS = 10V
120
9V 100
80
60 8V
40
20
0 0
7V
6V
5
10
15
20
25
30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 32A Value vs. Junction Temperature
3.4
VGS = 10V 3.0
2.6 I D = 64A
2.2
1.8
I D = 32A
1.4 1.0
0.6
0.2 -50
70
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs. Case Temperature
60
50
40
30
20
10
0
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
RDS(on) - Normalized
© 2019 IXYS CORPORATION, All Rights Reserved
IXFK64N50Q3 IXFX64N50Q3
ID - Amperes
Fig. 7. Input Admittance
100
90
80
70
60
50
TJ = 125oC
40 25oC
30
20
- 40oC
10
0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
VGS - Volts
g f s - Siemens
80 70 60 50 40 30 20 10
0 0
Fig. 8. Transconductance
TJ = - 40oC 25oC
125oC
10 20 30 40 50 60 70 80 90 100
ID - Amperes
IS - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
200 180 160 140 120
16
14
VDS = 250V
I D = 32A
12
I G = 10mA
10
Fig. 10. Gate Charge
VGS - Volts
100
8
80 TJ = 125oC
6
60
40
TJ = 25oC
4
20
2
0
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
0
VSD - Volts
50
100
150
200
QG - NanoCoulombs
100,000
f = 1 MHz
10,00.