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IXFK64N50Q3 Dataheets PDF



Part Number IXFK64N50Q3
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXFK64N50Q3 DatasheetIXFK64N50Q3 Datasheet (PDF)

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK64N50Q3 IXFX64N50Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C 64 A 160 A 64 A 4 J IS  IDM, VDD  VDSS, TJ  150C TC = 25C 50 .

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Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK64N50Q3 IXFX64N50Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C 64 A 160 A 64 A 4 J IS  IDM, VDD  VDSS, TJ  150C TC = 25C 50 1000 -55 ... +150 150 -55 ... +150 V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Torque (TO-264) Mounting Force (PLUS247) 1.13/10 20..120 /4.5..27 Nm/lb.in N/lb TO-264 PLUS247 10 g 6 g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 500 V 3.5 6.5 V 200 nA 50 A 2 mA 85 m VDSS = ID25 =  RDS(on) trr  500V 64A 85m 250ns TO-264 (IXFK) G D S Tab PLUS247 (IXFX) G D S Tab G = Gate D = Drain S = Source Tab = Drain Features  Low Intrinsic Gate Resistance  Low Package Inductance  Fast Intrinsic Rectifier  Low RDS(on) and QG Advantages  High Power Density  Easy to Mount  Space Savings Applications  DC-DC Converters  Battery Chargers  Switch-Mode and Resonant-Mode Power Supplies  DC Choppers  Temperature and Lighting Controls © 2019 IXYS CORPORATION, All Rights Reserved DS100346A(12/19) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz RGi Gate Input Resistance td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RthJC RthCS Characteristic Values Min. Typ. Max. 25 42 S 6950 pF 937 pF 93 pF 0.13  36 ns 11 ns 46 ns 9 ns 145 nC 50 nC 67 nC 0.125C/W 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr QRM IRM IF = 32A, -di/dt = 100A/s VR = 100V, VGS = 0V Characteristic Values Min. Typ. Max. 64 A 256 A 1.4 V 1.54 14 250 ns C A Note 1. Pulse test, t  300s, duty cycle, d  2%. IXFK64N50Q3 IXFX64N50Q3 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,860,072 5,017,508 4,881,106 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 ID - Amperes ID - Amperes Fig. 1. Output Characteristics @ TJ = 25oC 60 VGS = 10V 9V 50 40 8V 30 20 10 0 0 60 50 7V 6V 1 2 3 4 5 6 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC VGS = 10V 8V 40 7V 30 20 6V 10 5V 0 0 2 4 6 8 10 12 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 32A Value vs. Drain Current 3.0 VGS = 10V 2.6 TJ = 125oC 2.2 1.8 TJ = 25oC 1.4 1.0 0.6 0 20 40 60 80 100 120 ID - Amperes ID - Amperes RDS(on) - Normalized ID - Amperes IXFK64N50Q3 IXFX64N50Q3 Fig. 2. Extended Output Characteristics @ TJ = 25oC 140 VGS = 10V 120 9V 100 80 60 8V 40 20 0 0 7V 6V 5 10 15 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 32A Value vs. Junction Temperature 3.4 VGS = 10V 3.0 2.6 I D = 64A 2.2 1.8 I D = 32A 1.4 1.0 0.6 0.2 -50 70 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade RDS(on) - Normalized © 2019 IXYS CORPORATION, All Rights Reserved IXFK64N50Q3 IXFX64N50Q3 ID - Amperes Fig. 7. Input Admittance 100 90 80 70 60 50 TJ = 125oC 40 25oC 30 20 - 40oC 10 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 VGS - Volts g f s - Siemens 80 70 60 50 40 30 20 10 0 0 Fig. 8. Transconductance TJ = - 40oC 25oC 125oC 10 20 30 40 50 60 70 80 90 100 ID - Amperes IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 200 180 160 140 120 16 14 VDS = 250V I D = 32A 12 I G = 10mA 10 Fig. 10. Gate Charge VGS - Volts 100 8 80 TJ = 125oC 6 60 40 TJ = 25oC 4 20 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 VSD - Volts 50 100 150 200 QG - NanoCoulombs 100,000 f = 1 MHz 10,00.


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