High Speed IGBT
High Speed IGBT
Short Circuit SOA Capability
IXSH IXST IXSH IXST
24N60B 24N60B 24N60BD1 24N60BD1
VCES IC25 VCE(sat) t...
Description
High Speed IGBT
Short Circuit SOA Capability
IXSH IXST IXSH IXST
24N60B 24N60B 24N60BD1 24N60BD1
VCES IC25 VCE(sat) tfi typ
= 600 V = 48 A = 2.5 V = 170 ns
(D1)
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TJ = 125°C, RG = 33 Ω Clamped inductive load, VCC= 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 Ω, non repetitive TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 48 24 96 ICM = 48 @ 0.8 VCES 10 150 -55 ... +150 150 -55 ... +150 V V V V A A A A µs W °C °C °C
TO-247 AD (IXSH)
(TAB) G C E
TO-268 (D3) ( IXST)
G E G = Gate E = Emitter (TAB)
TAB = Collector
Features
z z
Mounting torque
1.13/10 Nm/lb.in. 6 300 g °C
z
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
z z
z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 3.5 24N60B 24N60BD1 24N60B 24N60BD1 6.5 25 200 1 2 ±100 2.5 V V µA µA mA mA nA V
International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 50 kHz
Applications
z z z
BVCES VGE(th) ICES
IC IC
= 250 µA, VGE = 0 V = 1.5 mA, VCE = VGE TJ = 25°C TJ = 125°C
VCE = 0.8 VCES VGE = 0 V
AC and DC motor speed contr...
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