IXTA76P10T

TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-268HV TO-247 Maximum Ratings - 100 V - 100 V 15 V 25 V - 76 A - 230 A - 38 A 1 J 298 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 /10 Nm/lb.in. 2.5 g 3.0 g 4.0 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250A VGS(th) VDS = VGS, ID = - 250A IGSS VGS = 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = -10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. -100 V - 2.0 - 4.0 V 100 nA - 15 A - 750 A 25 m © 2017 IXYS CORPORATION, All Rights Reserved VDSS = ID25 =  RDS(on) - 100V - 76A 25m TO-268HV (IXTT) G TO-263 AA (IXTA) S D (Tab) G S D (Tab) TO-220AB (IXTP) GD S TO-247 (IXTH) D (Tab) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain Features  International Standard Packages  Avalanche Rated  Extended FBSOA  Fast Intrinsic Diode  Low RDS(ON) and QG Advantages  Easy to Mount  Space Savings Ap...