Power MOSFET
TrenchPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T
D
G S
...
Description
TrenchPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T
D
G S
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-268HV TO-247
Maximum Ratings
- 100
V
- 100
V
15
V
25
V
- 76
A
- 230
A
- 38
A
1
J
298
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
1.13 /10
Nm/lb.in.
2.5
g
3.0
g
4.0
g
6.0
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250A
VGS(th)
VDS = VGS, ID = - 250A
IGSS
VGS = 15V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = -10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
-100
V
- 2.0
- 4.0 V
100 nA
- 15 A - 750 A
25 m
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VDSS = ID25 = RDS(on)
- 100V - 76A
25m
TO-268HV (IXTT)
G
TO-263 AA (IXTA)
S D (Tab)
G S
D (Tab)
TO-220AB (IXTP)
GD S
TO-247 (IXTH)
D (Tab)
G DS
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features
International Standard Packages Avalanche Rated Extended FBSOA Fast Intrinsic Diode Low RDS(ON) and QG
Advantages
Easy to Mount Space Savings
Ap...
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