Power MOSFET. IXTQ76N25T Datasheet

IXTQ76N25T MOSFET. Datasheet pdf. Equivalent


IXYS IXTQ76N25T
TrenchTM
Power MOSFET
N-Channel Enhancement Mode
IXTA76N25T
IXTP76N25T
IXTQ76N25T
IXTH76N25T
VDSS =
ID25 =
RDS(on)
250V
76A
44m
Typical Avalanched BV = 300V
TO-263 AA (IXTA)
TO-220AB (IXTP)
TO-3P (IXTQ)
G
S
D (Tab)
GD S
D (Tab)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
Maximum Ratings
250
V
250
V
20
V
30
V
TC = 25C
TC = 25C, Pulse Width Limited by TJM
76
A
170
A
TC = 25C
TC = 25C
8
A
1.5
J
TC = 25C
460
W
-55 ... +150
C
150
C
-55 ... +150
C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
°C
260
°C
Mounting Force (TO-263)
10..65 / 2.2..14.6
Mounting Torque (TO-220, TO-3P & TO-247)
1.13/10
N/lb
Nm/lb.in
TO-263
TO-220
TO-3P
TO-247
2.5
g
3.0
g
5.5
g
6.0
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS = 0V, ID = 10mA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
250
V
300
V
3.0
5.0 V
 100 nA
2 A
200 μA
44 m
G
D
S
TO-247(IXTH)
D (Tab)
G
D
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
Avalanche Rated
High Current Handling Capability
Fast Intrinsic Rectifier
Low RDS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
© 2015 IXYS CORPORATION, All Rights Reserved
DS99663G(11/15)


IXTQ76N25T Datasheet
Recommendation IXTQ76N25T Datasheet
Part IXTQ76N25T
Description Power MOSFET
Feature IXTQ76N25T; TrenchTM Power MOSFET N-Channel Enhancement Mode IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T VDSS .
Manufacture IXYS
Datasheet
Download IXTQ76N25T Datasheet




IXYS IXTQ76N25T
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
43
72
S
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
4920
pF
470
pF
70
pF
td(on)
Resistive Switching Times
22
ns
tr
td(off)
tf
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3(External)
25
56
29
ns
ns
ns
Qg(on)
Qgs
Qgd
VGS= 10V, VDS = 0.5 • VDSS , ID = 25A
92
nC
28
nC
21
nC
RthJC
RthCH
TO-220
TO-3P & TO-247
0.50
0.25
0.27 C /W
C W
C W
IXTA76N25T IXTP76N25T
IXTQ76N25T IXTH76N25T
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = 38A, -di/dt = 250A/s
IRM
QRM
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ. Max.
76 A
200 A
1.5 V
148
ns
21
A
1.6 C
Note 1: Pulse test, t 300s, duty cycle, d  2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



IXYS IXTQ76N25T
TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
IXTA76N25T IXTH76N25T
IXTP76N25T IXTQ76N25T
TO-220 Outline
Pins: 1 - Gate
3 - Source
2 - Drain
TO-247 Outline
P
123
e
Terminals: 1 - Gate
2 - Drain
3 - Source
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-3P Outline
© 2015 IXYS CORPORATION, All Rights Reserved







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