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Part Number IXTQ30N60L2
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTQ30N60L2 DatasheetIXTQ30N60L2 Datasheet (PDF)

  IXTQ30N60L2   IXTQ30N60L2
Preliminary Technical Information Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode Avalanche rated IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 VDSS ID25 RDS(on) = 600V = 30A ≤ 240mΩ TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 600 600 ±20 ±30 30 80 30 2 540 -55 to +150 +150 -55 to +150 V V V V A A A J W °C °C °C °C °C Nm/lb.in. g g g G = Gate S = Source G S G D S (TAB) TO-3P (TAB) TO-268 1.6mm (0.063in) from case for 10s Plastic body for 10s Mounting torque (TO-247&TO-3P) TO-247 TO-3P TO-268 300 260 1.13/10 6.0 5.5 4.0 (TAB) D = Drain TAB = Drain Features z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 250μA VGS = ±20V, VDS = 0V VDS = VDSS VGS = 0V TJ =.



IXTT30N60L2 IXTQ30N60L2 IXTH30N60L2


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