IXTX90P20P

PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTK90P20P IXTX90P20P VDSS = ID25 =  RDS(on) - 200V - 90A 44m TO-264 (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings - 200 V - 200 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C - 90 - 270 - 90 3.5 10 890 -55 ... +150 150 -55 ... +150 A A A J V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (PLUS247) Mounting Torque (TO-264) 20..120 / 4.5..27 1.13 / 10 N/lb Nm/lb.in PLUS247 TO-264 6 g 10 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250A VGS(th) VDS = VGS, ID = -1mA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS , VGS = 0V TJ = 125C RDS(on) VGS = -10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. - 200 V - 2.0 - 4.5 V 100 nA - 50 A - 250 A 44 m G D S Tab PLUS247 (IXTX) G D S Tab G = Gate S = Source D = Drain Tab = Drain Features  International Standard Packages  Rugged PolarPTM Process  Avalanche Rated  Fast Intrinsic Diode  Low Package Inductance Advantages  Easy to Mount  Space Savings  High Power Density Applications  High-Side Switches  Push Pull Amplifiers  DC Choppe...