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IXTX60N50L2

IXYS

Power MOSFET

LinearL2TM Power MOSFET w/Extended FBSOA N-Channel Enhancement Mode Avalanche Rated IXTK60N50L2 IXTX60N50L2 VDSS ID25 ...


IXYS

IXTX60N50L2

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Description
LinearL2TM Power MOSFET w/Extended FBSOA N-Channel Enhancement Mode Avalanche Rated IXTK60N50L2 IXTX60N50L2 VDSS ID25 RDS(on) = 500V = 60A < 100m TO-264 (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C 60 150 60 3 960 -55...+150 150 -55...+150 A A A J W  C  C  C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting torque (IXTK) Mounting Force (IXTX) 1.13/10 20..120 / 4.5..27 Nm/lb.in N/lb TO-264 PLUS247 10 g 6 g Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 ID25 , Note 1 Characteristic Values Min. Typ. Max. 500 V 2.5 4.5 V 200 nA 50  A 5 mA 100 m G D S Tab PLUS247 (IXTX) G D S Tab G = Gate S = Source D = Drain Tab = Drain Features  Designed for linear operation  International standard packages  Avalanche rated  Guaranteed FBSOA at 75C Advantages  Easy to mount  Space savings  High power density Applications  Solid state circuit breakers  Soft start controls  Linear amplifiers  Programmable loads  Current regulators © 2015 IXYS CORP...




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