IXYN82N120C3H1

1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYN82N120C3H1 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 1200V 46A 3.2V 93ns SOT-227B, miniBLOC E153432 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC TC TC TC = 25°C (Chip Capability) = 110°C = 110°C = 25°C, 1ms Maximum Ratings 1200 1200 ±20 ±30 105 46 42 320 41 800 ICM = 164 @VCE ≤ VCES 500 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A A A mJ A W °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g Features z z z z z Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C z z z Mounting Torque Terminal Connection Torque Optimized for Low Switching Losses Square RBSOA Isolation Voltage 2500V~ Anti-Parallel Ultra Fast Diode Positive Thermal Coefficient of Vce(sat) Avalanche Rated High Current Handling Capability International Standard Package Advantages z z High Power Density Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C Characteristic Values Min. Typ. Max. 1200 3.0 5.0 V V Applications z z z z z VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V IC ...