BSZ042N06NS

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V BSZ042N06NS DataSheet Rev.2.3 Final PowerManagement&Multimarket OptiMOSTMPower-Transistor,60V BSZ042N06NS 1Description Features OptimizedforhighperformanceSMPS,e.g.sync.rec. 100%avalanchetested Superiorthermalresistance N-channel QualifiedaccordingtoJEDEC1)fortargetapplications Pb-freeleadplating;RoHScompliant Halogen-freeaccordingtoIEC61249-2-21 Highersolderjointreliabilityduetoenlargedsourceinterconnection TSDSON-8FL (enlarged source interconnection) Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 4.2 mΩ ID 40 A QOSS 32 nC QG(0V..10V) 27 nC S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSZ042N06NS Package PG-TSDSON-8 FL Marking 042N06N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.3,2014-11-10 OptiMOSTMPower-Transistor,60V ...